In this Section, we report on the performance of single junction c-Si
solar cells with based on n-type and p-type poly-SiOx as
CSPCs. The sketches of SST and DST poly-SiOx passivated
c-Si solar cell were shown in Figure 2. The evolution of surface
passivation quality after annealing, hydrogenation, TCO deposition and
hydrogen annealing for SST solar cell precursors is shown in Figure
5(a). As expected, the iVoc increases by 20 mV after
hydrogenation. Then, the TCO deposition results in a considerable loss
in iVOC from 714 mV to 690 mV due to sputtering-related
damages [50],[58]. This loss in passivation is recovered by
annealing the cell precursor at 400 °C in hydrogen environment for 1
hour [57]. The best SST solar cell exhibited a certified designated
area power conversion efficiency (PCE) of 20.47% (Voc =
695 mV, Jsc = 36.68 mA/cm2, FF =
80.33%, metallization faction ~3%, designated area =
3.915 cm2, see Figure 5(c)). Moving from the previous
2-cm2 wide area device, SiOx layer
grown via wet-chemical NAOS and evaporated metallic contacts [50],
as well as applying the further optimized doped
poly-SiOx layers, we could keep the Vocrelatively high (from 691 mV to 695 mV) and sensibly improve the FF
(from 76.4% to 80.3%) of the solar cells based on
poly-SiOx CSPCs.